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FDA8440 N-Channel PowerTrench(R) MOSFET March 2007 FDA8440 N-Channel PowerTrench(R) MOSFET 40V, 100A, 2.1m Features * RDS(on) = 1.46m (Typ.)@ VGS = 10V, ID = 80A * Qg(tot) = 345nC (Typ.)@ VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * 160A Guarantee for 2 sec * RoHS Compliant tm Application * Automotive Engine Control * Powertrain Management * Motors, Solenoids * Electronic Steering * Integrated Starter/ Alternator * Distributed Power Architectures and VRMs * Primary Switch for 12V systems D G TO-3PN G DS S C MOSFET Maximum Ratings T Symbol VDSS VGSS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC = 145oC) = 25oC unless otherwise noted Parameter Ratings 40 20 100 o Units V V A A A mJ W mW/oC oC ID - Continuous (TA = 25 C, VGS = 10V, RJA = 40 C/W ) - Pulsed o 30 500 (Note 1) 410 250 1.67 -55 to +175 EAS PD TJ, TSTG Single Pulsed Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 2) 0.6 40 o o C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA8440 Rev. A FDA8440 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking FDA8440 Device FDA8440 Package TO-3PN TC = 25C unless otherwise noted Reel Size N/A Tape Width N/A Quantity 30units Electrical Characteristics Symbol Off Characteristics BVDSS IDSS IGSS VGS(th) RDS(on) Parameter Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current Gate to Source Threshold Voltage Static Drain-Source On-Resistance Conditions VGS = 0V, ID = 250A VDS = 32V VGS = 0V VGS = 20V VDS = VGS, ID = 250A VGS = 4.5V, ID = 80A VGS = 10V, ID = 80A VGS = 10V, ID = 80A, TC = 175oC TC = 150oC Min 40 ---1 ---- Typ -----1.56 1.46 2.82 Max Units -1 250 100 3 2.2 2.1 4.1 m V A A nA V On Characteristics Dynamic Characteristics Ciss Coss Crss RG Qg(tot) Qg(2) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge (VGS = 10V) -VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 20V ID = 80A Ig = 1.0mA --------- 18600 1840 1400 1.1 345 32.5 49 42 74 24740 2450 2100 -450 ----- pF pF pF nC nC nC nC nC Switching Characteristics tON td(on) tr td(off) tf tOFF Turn-On Time -VDD = 20V,ID = 80A VGS = 10V, RGEN = 7 -----ISD = 80A ISD = 40A ISD = 75A, dISD/dt = 100A/s ISD = 75A, dISD/dt = 100A/s ----- 175 43 130 435 290 730 --59 77 360 95 275 875 590 1470 1.25 1.0 --- ns ns ns ns ns ns V V ns nC Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics and Maximum Ratings VSD trr QRR NOTES: 1: Starting TJ = 25C, L = 200H, IAS = 64A, VDD = 36V, VGS = 10V. 2: Pulse width = 100s Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge FDA8440 Rev. A 2 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 400 Figure 2. Transfer Characteristics 400 100 ID,Drain Current[A] VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V * Notes : 1. 250s Pulse Test 2. TC = 25 C o 100 ID,Drain Current[A] o 150 C -55 C o 10 10 25 C * Notes : 1. VDS = 20V 2. 250s Pulse Test o 1 0.4 0.04 0.1 VDS,Drain-Source Voltage[V] 1 1 0 2 4 VGS,Gate-Source Voltage[V] 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.60 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1000 RDS(ON) [m], Drain-Source On-Resistance 1.55 IS, Reverse Drain Current [A] VGS = 4.5V 100 150 C o o 25 C 1.50 10 Notes: 1. VGS = 0V 2. 250s Pulse Test VGS = 10V 1.45 0 50 * Note : TJ = 25 C o 100 150 ID, Drain Current [A] 200 250 1 0.3 0.6 0.9 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 30000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 25V VDS = 20V VDS = 15V 24000 8 Capacitances [pF] Ciss 18000 * Note: 1. VGS = 0V 2. f = 1MHz 6 12000 Coss 4 6000 Crss 2 * Note : ID = 80A 0 -1 10 10 VDS, Drain-Source Voltage [V] 0 10 1 20 0 0 100 200 300 Qg, Total Gate Charge [nC] 400 FDA8440 Rev. A 3 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage rDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 2.0 1.5 1.0 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.5 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.0 -100 * Notes : 1. VGS = 10V 2. ID = 80A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Safe Operating Area 5000 1000 ID, Drain Current [A] IAS, Avalanche current(A) 100s TJ = 25 C o 100 10 TJ = 150 C o 10 Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 1ms 10ms 100ms 1 1 0.1 0.1 1 10 100 1000 tAV, Time in avalanche[ms] 10000 1 10 VDS, Drain-Source Voltage [V] 50 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.1 0.2 0.1 0.05 0.02 PDM t1 t2 o 0.01 0.01 Single pulse * Notes : 1. ZJC(t) = 0.6 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 1E-3 -5 10 10 -4 10 10 Rectangular Pulse Duration [sec] -3 -2 10 -1 10 0 FDA8440 Rev. A 4 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA8440 Rev. A 5 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA8440 Rev. A 6 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA8440 Rev. A 7 www.fairchildsemi.com FDA8440 N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM tm TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 No Identification Needed Full Production Obsolete Not In Production 8 FDA8440 Rev. A www.fairchildsemi.com |
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